1N4448 A0

Teknik Özellikler

Peak Nonrepetitive Surge Current A

2

Parça Durumu

Active

Maximum Operating Temperature C

150

Maximum Power Dissipation Mw

500

Reflow Temperaturemax S

30

Peak Forward Voltage V

1@0.1A

Ihs Manufacturer

TAIWAN SEMICONDUCTOR CO LTD

Package Shape

ROUND

Number Of Terminals

2

Package Length

3.7(Max)

Qualification Status

Not Qualified

Tip

Small Signal Switching Diode

Package Style

LONG FORM

Terminal Pozisyonu

AXIAL

Jesd30 Code

O-LALF-W2

Reverse Recovery Timemax

0.004 µs

Jedec95 Code

DO-35

Peak Reverse Current Ua

5@75V

Number Of Elements Per Chip

1

Rep Pk Reverse Voltagemax

100 V

REACH Uyumluluk Kodu

compliant

Ambalaj

Ammo

Çap

2.1(Max)

Diode Element Material

SILICON

Maximum Continuous Forward Current A

0.15

Yüzey Montaj

NO

Peak Reverse Recovery Time

4ns

Üretici Parça No

1N4448A0

ECCN Kodu

EAR99

Number Of Elements

1

Terminal Formu

WIRE

Pcb Changed

2

Maximum Dc Reverse Voltage V

100

Configuration

Single

Peak Reverse Repetitive Voltage V

100

Mounting

Through Hole

Operating Temperaturemax

150 °C

Part Life Cycle Code

Active

Package Body Material

GLASS

Risk Rank

5.06