STS8DN3LLH5

Teknik Özellikler

Fall Time Typ

3.5 ns

Ambalaj

Tape & Reel (TR)

JESD-609 Kodu

e4

Tepe Reflow Süresi (maks. sn)

30

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

40A

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

22V

Max Power Dissipation

2.7W

Rise Time

4.2ns

Rds On Max Id Vgs

19m Ω @ 5A, 10V

Pin Sayısı

8

Gate Charge Qg Max Vgs

5.4nC @ 4.5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Radyasyon Dayanımı

No

Direnç

19MOhm

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Fabrika Tedarik Süresi

14 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Element Configuration

Dual

Terminal Sayısı

8

Seri

STripFET™ V

Transistor Application

SWITCHING

Continuous Drain Current Id

10A

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Input Capacitance Ciss Max Vds

724pF @ 25V

Power Dissipation

2.7W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)