STS5DPF20L

Teknik Özellikler

Fall Time Typ

35 ns

Ambalaj

Tape & Reel (TR)

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

Akım Değeri

-5A

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.075Ohm

Gate To Source Voltage Vgs

16V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj

Surface Mount

Vgsth Max Id

2.5V @ 250μA

Transistor Element Material

SILICON

Rds On Max Id Vgs

55m Ω @ 2.5A, 10V

Max Power Dissipation

1.6W

Rise Time

35ns

Gate Charge Qg Max Vgs

16nC @ 5V

Pin Sayısı

8

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

150°C TJ

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Seri

STripFET™ II

Terminal Sayısı

8

Parça Durumu

Obsolete

Continuous Drain Current Id

5A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

1350pF @ 16V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

1.6W

Voltage Rated Dc

-20V

Temel Parça No

STS5D

Fet Type

2 P-Channel (Dual)

Turn On Delay Time

25 ns

Drain To Source Breakdown Voltage

20V

Turn Off Delay Time

125 ns

Pin Sayısı

8