STS4DPF30L

Teknik Özellikler

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2W

Montaj Tipi

Surface Mount

Number Of Elements

2

Drain To Source Breakdown Voltage

-30V

Turn On Delay Time

25 ns

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

16V

Drain To Source Voltage Vdss

30V

Transistor Element Material

SILICON

JESD-609 Kodu

e3

Transistor Application

SWITCHING

Yükseklik

1.25mm

Seri

STripFET™

Element Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Operating Mode

ENHANCEMENT MODE

Uzunluk

5mm

Direnç

80mOhm

Gate Charge Qg Max Vgs

16nC @ 5V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rds On Max Id Vgs

80m Ω @ 2A, 10V

Input Capacitance Ciss Max Vds

1350pF @ 25V

Terminal Kaplaması

Matte Tin (Sn) - annealed

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Threshold Voltage

1V

Continuous Drain Current Id

4A

Parça Durumu

Obsolete

Pin Sayısı

8

Reach Svhc

No SVHC

Drain Currentmax Abs Id

4A

Turn Off Delay Time

125 ns

Voltage Rated Dc

-30V

Temel Parça No

STS4D

Fet Type

2 P-Channel (Dual)

Montaj

Surface Mount

Vgsth Max Id

1V @ 250μA

Terminal Formu

GULL WING

Fet Feature

Standard