STS4DNF60

Teknik Özellikler

Rds On Max Id Vgs

90m Ω @ 2A, 10V

Rise Time

18ns

Max Power Dissipation

2W

Gate Charge Qg Max Vgs

10nC @ 10V

Pin Sayısı

8

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Terminal Sayısı

8

Seri

STripFET™

Fall Time Typ

6 ns

Ambalaj

Tape & Reel (TR)

Additional Feature

LOW THRESHOLD

Terminal Formu

GULL WING

Fet Feature

Logic Level Gate

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

16A

ECCN Kodu

EAR99

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

20V

Drainsource On Resistancemax

0.09Ohm

Montaj

Surface Mount

Vgsth Max Id

4V @ 250μA

Drain To Source Voltage Vdss

60V

Transistor Element Material

SILICON

Temel Parça No

STS4D

Turn On Delay Time

7 ns

Fet Type

2 N-Channel (Dual)

Drain To Source Breakdown Voltage

60V

Turn Off Delay Time

17 ns

Pin Sayısı

8

Drain Currentmax Abs Id

4A

Number Of Elements

2

Continuous Drain Current Id

4A

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

315pF @ 25V