STS3DPF60L

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

3A

Parça Durumu

Obsolete

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Input Capacitance Ciss Max Vds

630pF @ 25V

Montaj Tipi

Surface Mount

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Turn Off Delay Time

39 ns

Drain To Source Breakdown Voltage

-60V

Fet Type

2 P-Channel (Dual)

Temel Parça No

STS3D

Voltage Rated Dc

-60V

Number Of Elements

2

Drain Currentmax Abs Id

3A

Pin Sayısı

8

Additional Feature

LOW THRESHOLD

JESD-609 Kodu

e4

Ambalaj

Tape & Reel (TR)

Fall Time Typ

14.5 ns

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

60V

Vgsth Max Id

1.5V @ 250μA

Qualification Status

Not Qualified

Montaj

Surface Mount

Drainsource On Resistancemax

0.16Ohm

Gate To Source Voltage Vgs

16V

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Akım Değeri

-3A

Tepe Reflow Süresi (maks. sn)

30

Fet Feature

Logic Level Gate

Terminal Formu

GULL WING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Gate Charge Qg Max Vgs

15.7nC @ 4.5V

Max Power Dissipation

2W

Rise Time

54ns

Rds On Max Id Vgs

120m Ω @ 1.5A, 10V

Seri

STripFET™