STS3DNE60L

Teknik Özellikler

Turn On Delay Time

20 ns

Fet Type

2 N-Channel (Dual)

Temel Parça No

STS3D

Number Of Elements

2

Pin Sayısı

8

Drain Currentmax Abs Id

3A

Nem Hassasiyeti (MSL)

3 (168 Hours)

Continuous Drain Current Id

3A

Parça Durumu

Obsolete

Input Capacitance Ciss Max Vds

815pF @ 25V

Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Pin Sayısı

8

Gate Charge Qg Max Vgs

13.5nC @ 4.5V

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation

2W

Rise Time

30ns

Rds On Max Id Vgs

80m Ω @ 1.5A, 10V

Terminal Sayısı

8

Seri

STripFET™

Ds Breakdown Voltagemin

60V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e4

Additional Feature

LOW THRESHOLD

Fall Time Typ

16 ns

Ambalaj

Tape & Reel (TR)

Montaj

Surface Mount

Vgsth Max Id

1V @ 250μA

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

60V

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.1Ohm

Gate To Source Voltage Vgs

20V

Tepe Reflow Süresi (maks. sn)

30