STS10DN3LH5

Teknik Özellikler

Fet Type

2 N-Channel (Dual)

Fabrika Tedarik Süresi

14 Weeks

Transistor Element Material

SILICON

Terminal Formu

GULL WING

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time

22ns

Gate Charge Qg Max Vgs

4.6nC @ 5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn Off Delay Time

13 ns

ECCN Kodu

EAR99

Direnç

21MOhm

Radyasyon Dayanımı

No

Pin Sayısı

8

Vgsth Max Id

1V @ 250μA

Turn On Delay Time

4 ns

Drain To Source Voltage Vdss

30V

Lifecycle Status

NRND (Last Updated: 8 months ago)

Terminal Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

10A

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Pulsed Drain Currentmax Idm

40A

Power Dissipation

2.5W

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

8

JESD-609 Kodu

e4

Drain To Source Breakdown Voltage

30V

Parça Durumu

Active

Number Of Elements

2

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Temel Parça No

STS10

Avalanche Energy Rating Eas

50 mJ

Fet Feature

Logic Level Gate

Tepe Reflow Sıcaklığı (°C)

260

Max Power Dissipation

2.5W

Gate To Source Voltage Vgs

22V