STR1550

Teknik Özellikler

Max Junction Temperature Tj

150°C

Fabrika Tedarik Süresi

8 Weeks

Terminal Formu

GULL WING

Hfemin

100

Transistor Element Material

SILICON

Collector Base Voltage Vcbo

500V

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage Vceo

500V

Collectoremitter Breakdown Voltage

500V

Polaritychannel Type

NPN

Transistor Type

NPN

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Pin Sayısı

3

Current Collector Cutoff Max

10μA ICBO

Element Configuration

Single

Terminal Sayısı

3

Uzunluk

3.04mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Transistor Application

AMPLIFIER

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

300mV @ 6mA, 50mA

Genişlik

1.75mm

Power Dissipation

500mW

Ambalaj

Cut Tape (CT)

Collectoremitter Saturation Voltage

300mV

Dc Current Gain Hfe Min Ic Vce

100 @ 50mA 10V

Parça Durumu

Active

Reach Svhc

No SVHC

Number Of Elements

1

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Temel Parça No

STR1550

Contact Plating

Tin

Max Breakdown Voltage

500V

Yükseklik

1.4mm

Max Power Dissipation

500mW

Montaj

Surface Mount