STL8DN10LF3

Teknik Özellikler

Max Power Dissipation

70W

Transistor Application

SWITCHING

Rise Time

9.6ns

Fall Time Typ

5.2 ns

Temel Parça No

STL8

Radyasyon Dayanımı

No

Drainsource On Resistancemax

0.05Ohm

Element Configuration

Dual

Gate To Source Voltage Vgs

20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Power Dissipation

70W

Terminal Sayısı

6

Drain To Source Breakdown Voltage

100V

Montaj

Surface Mount

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Cut Tape (CT)

ECCN Kodu

EAR99

Seri

Automotive, AEC-Q101, STripFET™ III

Vgsth Max Id

3V @ 250μA

RoHS Durumu

ROHS3 Compliant

Montaj Tipi

Surface Mount

Input Capacitance Ciss Max Vds

970pF @ 25V

Kılıf / Paket

8-PowerVDFN

Jesd30 Code

R-PDSO-F6

Parça Durumu

Active

Fabrika Tedarik Süresi

12 Weeks

Turn On Delay Time

8.7 ns

Fet Feature

Logic Level Gate

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Additional Feature

AVALANCHE RATED

Rds On Max Id Vgs

35m Ω @ 4A, 10V

Çalışma Sıcaklığı

-55°C~175°C TJ

Kurşunsuz

Lead Free

Avalanche Energy Rating Eas

190 mJ

Gate Charge Qg Max Vgs

20.5nC @ 10V

Number Of Elements

2

Terminal Formu

FLAT

Pin Sayısı

8

Drain To Source Voltage Vdss

100V