STGWA75H65DFB2

Teknik Özellikler

Collector Emitter Voltage Vceo Max

650 V

Besleme Gerilimi

1.8V ~ 3.3V

Maks. Çalışma Sıcaklığı

+ 175 C

Temel Ürün No

SG-8101

Pin Sayısı

3

Seri

SG-8101

Gate Charge

207 nC

Configuration

Single

Vceon Max Vge Ic

2V @ 15V, 75A

Tedarikçi Cihaz Paketi

TO-247 Long Leads

Giriş Tipi

Standard

Ürün Tipi

IGBT Transistors

Boyut / Ölçü

0.276 L x 0.197 W (7.00mm x 5.00mm)

Voltage Collector Emitter Breakdown Max

650 V

Current Collector Pulsed Icm

225 A

Maximum Gate Emitter Voltage

±20V

Tip

XO (Standard)

Ürün Durumu

Active

Maximum Collector Emitter Voltage

650 V

Continuous Collector Current At25 C

115 A

Frekans

24.74 MHz

Collectoremitter Saturation Voltage

1.55

Maks. Oturma Yüksekliği

0.055 (1.40mm)

Output

CMOS

Birim Ağırlık

0.215171 oz

Current Supply Disable Max

1.1µA

Function

Standby (Power Down)

RoHS

Details

Switching Energy

1.428mJ (on), 1.05mJ (off)

Power Max

357 W

Montaj Tipi

Surface Mount

Base Resonator

Crystal

Package Type

TO-247

Frequency Stability

±15ppm

Paket

Tape & Reel (TR)

Kılıf / Paket

4-SMD, No Lead

Ambalaj

Tube

Test Conditions

400V, 75A, 2.2Ohm, 15V

Reverse Recovery Time Trr

88 ns

Fabrika Paket Adedi

600