STGW50H65DFB2-4

Teknik Özellikler

Ürün Tipi

IGBT Transistors

Power Max

272 W

Reverse Recovery Time Trr

92 ns

Td Onoff25c

18ns/128ns

Montaj Tipi

Through Hole

Collector Emitter Voltage Vceo Max

650 V

Kılıf / Paket

TO-247-4

Ambalaj

Tube

Ürün Durumu

Active

Paket

Tube

Technology

Si

Seri

HB2

Maximum Gate Emitter Voltage

- 20 V, + 20 V

Currentcollector Ic Max

86 A

Gate Charge

151 nC

Configuration

Single

Birim Ağırlık

0.156264 oz

Continuous Collector Current

86

Switching Energy

629μJ (on), 478μJ (off)

Maks. Çalışma Sıcaklığı

+ 175 C

Continuous Collector Current At25 C

86 A

Pd Power Dissipation

272 W

Minimum Operating Temperature

- 55 C

Montaj Stili

Through Hole

Temel Ürün No

STGW50

Vceon Max Vge Ic

2V @ 15V, 50A

Test Conditions

400V, 50A, 12Ohm, 15V

Collectoremitter Saturation Voltage

1.55

Tedarikçi Cihaz Paketi

TO-247-4

Voltage Collector Emitter Breakdown Max

650 V

RoHS

Details

Giriş Tipi

Standard

Current Collector Pulsed Icm

150 A

Fabrika Paket Adedi

600

Power Dissipation

272

Igbt Type

Trench Field Stop

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)