STGW40S120DF3

Teknik Özellikler

Test Conditions

600V, 40A, 15 Ω, 15V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Transistor Application

POWER CONTROL

Jesd30 Code

R-PSFM-T3

RoHS Durumu

ROHS3 Compliant

Reverse Recovery Time

355 ns

Voltage Collector Emitter Breakdown Max

1200V

Current Collector Pulsed Icm

160A

Giriş Tipi

Standard

Igbt Type

Trench Field Stop

Çalışma Sıcaklığı

-55°C~175°C TJ

Montaj

Surface Mount

Max Collector Current

80A

Switching Energy

1.43mJ (on), 3.83mJ (off)

Nem Hassasiyeti (MSL)

Not Applicable

Number Of Elements

1

Case Connection

COLLECTOR

Transistor Element Material

SILICON

Vceon Max Vge Ic

2.15V @ 15V, 40A

Gate Charge

129nC

Temel Parça No

STGW40

Fabrika Tedarik Süresi

41 Weeks

Terminal Sayısı

3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Collector Emitter Voltage Vceo

2.15V

Configuration

SINGLE WITH BUILT-IN DIODE

Collectoremitter Breakdown Voltage

1.2kV

Turn On Time

50 ns

Power Max

468W

Montaj Tipi

Through Hole

Turn Off Timenom Toff

158.46 ns

Polaritychannel Type

N-CHANNEL

Parça Durumu

Active

Td Onoff25c

35ns/148ns

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Max Power Dissipation

468W

Ambalaj

Tube