Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Gate Charge
- 110nC
- Terminal Sayısı
- 3
- Temel Parça No
- STGW30
- Seri
- PowerMESH™
- Collectoremitter Breakdown Voltage
- 900V
- Turn On Time
- 41 ns
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Collector Emitter Voltage Vceo
- 900V
- Turn Off Timenom Toff
- 928 ns
- Polaritychannel Type
- N-CHANNEL
- Gateemitter Thr Voltagemax
- 5.75V
- Montaj Tipi
- Through Hole
- Td Onoff25c
- 29ns/275ns
- Parça Durumu
- Obsolete
- Power Max
- 220W
- Max Power Dissipation
- 220W
- Ambalaj
- Tube
- Kılıf / Paket
- TO-247-3
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PSFM-T3
- Gateemitter Voltagemax
- 25V
- Qualification Status
- Not Qualified
- Reverse Recovery Time
- 152 ns
- Test Conditions
- 900V, 20A, 10 Ω, 15V
- Transistor Application
- POWER CONTROL
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Through Hole
- Giriş Tipi
- Standard
- Current Collector Pulsed Icm
- 135A
- Pin Sayısı
- 3
- Max Collector Current
- 60A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Switching Energy
- 1.66mJ (on), 4.44mJ (off)
- Element Configuration
- Single
- Vceon Max Vge Ic
- 2.75V @ 15V, 20A
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
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