STGB35N35LZT4

Teknik Özellikler

Collectoremitter Saturation Voltage

1.15V

Gateemitter Voltagemax

12V

JESD-609 Kodu

e3

Turn Off Delay Time

28 μs

Turn On Delay Time

1.1 μs

ECCN Kodu

EAR99

Turn Off Timenom Toff

37000 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~175°C TJ

Transistor Application

POWER CONTROL

Max Breakdown Voltage

345V

Max Power Dissipation

176W

Current Collector Pulsed Icm

80A

Giriş Tipi

Logic

Number Of Elements

1

Test Conditions

300V, 15A, 5V

Collector Emitter Voltage Vceo

380V

Case Connection

COLLECTOR

Turn On Time

7600 ns

Terminal Kaplaması

Matte Tin (Sn) - annealed

Pin Sayısı

3

Collectoremitter Breakdown Voltage

345V

Element Configuration

Single

Terminal Pozisyonu

DUAL

Jesd30 Code

R-PDSO-G2

Additional Feature

VOLTAGE CLAMPING

Montaj

Surface Mount

Vceon Max Vge Ic

1.7V @ 4.5V, 15A

Tepe Reflow Sıcaklığı (°C)

245

Ambalaj

Tape & Reel (TR)

Montaj Tipi

Surface Mount

Temel Parça No

STGB35

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation

176W

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

RoHS Durumu

ROHS3 Compliant

Terminal Formu

GULL WING

Max Collector Current

40A

Terminal Sayısı

2