STB5NC50T4

Teknik Özellikler

Ihs Manufacturer

STMICROELECTRONICS

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

22 A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

280 mJ

Number Of Elements

1

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

100 W

Configuration

SINGLE WITH BUILT-IN DIODE

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Terminal Kaplaması

Matte Tin (Sn)

Drainsource On Resistancemax

1.5 Ω

Yüzey Montaj

YES

Number Of Terminals

2

Package Shape

RECTANGULAR

REACH Uyumluluk Kodu

not_compliant

Operating Temperaturemax

175 °C

Drain Currentmax Id

5.5 A

Ds Breakdown Voltagemin

500 V

ECCN Kodu

EAR99

Pin Sayısı

3

Part Life Cycle Code

Obsolete

Qualification Status

Not Qualified

Polaritychannel Type

N-CHANNEL

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

JESD-609 Kodu

e3

Moisture Sensitivity Levels

1

Rohs Code

Yes