STB22NM50-1

Teknik Özellikler

Ihs Manufacturer

STMICROELECTRONICS

Avalanche Energy Rating Eas

650 mJ

Terminal Formu

THROUGH-HOLE

Pulsed Drain Currentmax Idm

80 A

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Power Dissipationmax Abs

192 W

Configuration

SINGLE WITH BUILT-IN DIODE

Number Of Elements

1

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Jesd30 Code

R-PSIP-T3

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.215 Ω

Number Of Terminals

3

Package Shape

RECTANGULAR

Yüzey Montaj

NO

Jedec95 Code

TO-262AA

REACH Uyumluluk Kodu

compliant

Operating Temperaturemax

150 °C

ECCN Kodu

EAR99

Ds Breakdown Voltagemin

500 V

Drain Currentmax Id

20 A

Qualification Status

Not Qualified

Pin Sayısı

3

Part Package Code

TO-262AA

Part Life Cycle Code

Obsolete

Polaritychannel Type

N-CHANNEL

Package Description

IN-LINE, R-PSIP-T3

Package Style

IN-LINE