STB20NM50

Teknik Özellikler

Ihs Manufacturer

STMICROELECTRONICS

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

80 A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

650 mJ

Number Of Elements

1

Transistor Element Material

SILICON

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipationmax Abs

192 W

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Date Of Intro

1980-01-04

Terminal Kaplaması

Matte Tin (Sn)

Drainsource On Resistancemax

0.25 Ω

Yüzey Montaj

YES

Number Of Terminals

2

Package Shape

RECTANGULAR

Jedec95 Code

TO-263AB

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

not_compliant

Ds Breakdown Voltagemin

500 V

Drain Currentmax Id

20 A

Kurşunsuz Kodu

Yes

ECCN Kodu

EAR99

Pin Sayısı

4

Part Package Code

D2PAK

Part Life Cycle Code

Active

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qualification Status

Not Qualified

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Polaritychannel Type

N-CHANNEL

Package Description

TO-263, D2PAK-3

Package Style

SMALL OUTLINE

JESD-609 Kodu

e3

Rohs Code

Yes