PD20010-E

Teknik Özellikler

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Montaj

Surface Mount

Drain To Source Voltage Vdss

40V

Transistor Type

LDMOS

Frekans

2GHz

Akım Değeri

5A

Polaritychannel Type

N-CHANNEL

Drain To Source Breakdown Voltage

40V

Min. Çalışma Sıcaklığı

-65°C

Power Dissipation

59W

Current Test

150mA

Max Power Dissipation

59W

Maks. Çalışma Sıcaklığı

165°C

Parça Durumu

Active

Fabrika Tedarik Süresi

25 Weeks

Fet Technology

METAL-OXIDE SEMICONDUCTOR

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

3 (168 Hours)

Qualification Status

Not Qualified

Kılıf / Paket

PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)

ECCN Kodu

EAR99

Ambalaj

Tube

Element Configuration

Single

Continuous Drain Current Id

5A

Voltage Test

13.6V

Additional Feature

ESD PROTECTION, HIGH RELIABILITY

Gain

11dB

Operating Mode

ENHANCEMENT MODE

Case Connection

SOURCE

Drain Currentmax Abs Id

5A

Number Of Elements

1

Transistor Application

AMPLIFIER

Power Output

10W

Terminal Sayısı

2

Terminal Pozisyonu

DUAL

Max Output Power

15W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate To Source Voltage Vgs

15V

Jesd30 Code

R-PDSO-G2