Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Terminal Kaplaması
- Matte Tin (Sn)
- Dc Current Gain Hfe Min Ic Vce
- 5 @ 5.5A 5V
- ECCN Kodu
- EAR99
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Through Hole
- Radyasyon Dayanımı
- No
- Ambalaj
- Tube
- Emitter Base Voltage Vebo
- 7V
- Hfemin
- 5
- Transistor Element Material
- SILICON
- Kılıf / Paket
- ISOWATT218FX
- Power Dissipation
- 58W
- Number Of Elements
- 1
- Case Connection
- ISOLATED
- Temel Parça No
- MD2009
- Terminal Sayısı
- 3
- Current Collector Cutoff Max
- 200μA
- Collectoremitter Breakdown Voltage
- 700V
- Max Collector Current
- 10A
- Transistor Application
- AMPLIFIER
- Vce Saturation Max Ib Ic
- 2.8V @ 1.4A, 5.5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collector Emitter Voltage Vceo
- 700V
- JESD-609 Kodu
- e3
- Additional Feature
- BUILT-IN BIAS RESISTORS
- Çalışma Sıcaklığı
- 150°C TJ
- Polaritychannel Type
- NPN
- Continuous Collector Current
- 10A
- Transistor Type
- NPN
- Parça Durumu
- Obsolete
- Element Configuration
- Single
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Max Power Dissipation
- 58W
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