Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Hfemin
- 20
- Parça Durumu
- Obsolete
- Uzunluk
- 39.5mm
- Reach Svhc
- No SVHC
- Jesd30 Code
- O-MBFM-P2
- JESD-609 Kodu
- e3
- Transition Frequency
- 8MHz
- Ambalaj
- Tube
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Rated Dc
- 125V
- Montaj Tipi
- Chassis Mount
- Case Connection
- COLLECTOR
- Terminal Formu
- PIN/PEG
- Max Power Dissipation
- 150W
- Dc Current Gain Hfe Min Ic Vce
- 20 @ 10A 2V
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Gain Bandwidth Product
- 8MHz
- Max Collector Current
- 25A
- Power Dissipation
- 150W
- Temel Parça No
- BUX10
- Collector Emitter Voltage Vceo
- 125V
- Transistor Type
- NPN
- Kılıf / Paket
- TO-204AA, TO-3
- Emitter Base Voltage Vebo
- 7V
- Collectoremitter Saturation Voltage
- 700mV
- Transistor Application
- SWITCHING
- Terminal Pozisyonu
- BOTTOM
- Montaj
- Chassis Mount, Through Hole
- Çalışma Sıcaklığı
- 200°C TJ
- Vce Saturation Max Ib Ic
- 1.2V @ 2A, 20A
- Polaritychannel Type
- NPN
- ECCN Kodu
- EAR99
- Current Collector Cutoff Max
- 1.5mA
- Terminal Kaplaması
- Tin (Sn)
- Genişlik
- 26.2mm
- Pin Sayısı
- 2
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