Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Collectoremitter Breakdown Voltage
- 60V
- Max Power Dissipation
- 50W
- Max Collector Current
- 8A
- Collectoremitter Saturation Voltage
- 800mV
- Vcesatmax
- 0.8 V
- Collector Emitter Voltage Vceo
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Voltage Rated Dc
- -60V
- Parça Durumu
- Obsolete
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Montaj Tipi
- Through Hole
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 800mV @ 600mA, 6A
- Gain Bandwidth Product
- 12MHz
- Power Dissipation
- 50W
- Current Collector Cutoff Max
- 100μA
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Transistor Type
- PNP
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tube
- Emitter Base Voltage Vebo
- 5V
- JESD-609 Kodu
- e3
- Polaritychannel Type
- PNP
- Transition Frequency
- 12MHz
- Kurşunsuz Kodu
- yes
- Hfemin
- 20
- Kılıf / Paket
- TO-220-3
- Temel Parça No
- BD536
- Reach Svhc
- No SVHC
- Dc Current Gain Hfe Min Ic Vce
- 25 @ 2A 2V
- Akım Değeri
- -8A
- Contact Plating
- Tin
- Collector Base Voltage Vcbo
- 60V
- Number Of Elements
- 1
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