ADP360120W3

Teknik Özellikler

RoHS

Details

Paket

Tray

Kılıf / Paket

Module

Vf Forward Voltage

4.3 V

Gate Charge Qg Max Vgs

944nC @ 18V

Technology

Silicon Carbide (SiC)

Vgs Th Gatesource Threshold Voltage

4.4 V

Vds Drainsource Breakdown Voltage

1.2 kV

Rds On Drainsource Resistance

2.55 mOhms

Ürün Tipi

Discrete Semiconductor Modules

Power Max

704W (Tj)

Drain To Source Voltage Vdss

1200V (1.2kV)

Pd Power Dissipation

704 W

Minimum Operating Temperature

- 40 C

Id Continuous Drain Current

379 A

Tedarikçi Cihaz Paketi

ACEPACK

Current Continuous Drain Id25

379A (Tj)

Çalışma Sıcaklığı

-40°C ~ 175°C (TJ)

Configuration

6 N-Channel

Temel Ürün No

ADP360120

Rds On Max Id Vgs

3.45mOhm @ 360A, 18V

Montaj Tipi

Chassis Mount

Vgsth Max Id

4.4V @ 40mA

Tip

SiC Power MOSFET Module

Maks. Çalışma Sıcaklığı

+ 175 C

Birim Ağırlık

1.609 lbs

Ambalaj

Tray

Vgs Gatesource Voltage

- 10 V, + 22 V

Montaj Stili

Screw Mounts

Input Capacitance Ciss Max Vds

28070pF @ 800V

Ürün Durumu

Active