2N6059

Teknik Özellikler

JESD-609 Kodu

e0

Transition Frequency

4MHz

Additional Feature

BUILT-IN BIAS RESISTORS

Vce Saturation Max Ib Ic

3V @ 120mA, 12A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Type

NPN - Darlington

Terminal Sayısı

2

Power Dissipation Ambientmax

150W

Polaritychannel Type

NPN

Transistor Element Material

SILICON

Number Of Elements

1

Current Collector Cutoff Max

1mA

ECCN Kodu

EAR99

Currentcollector Ic Max

12A

Qualification Status

Not Qualified

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

TO-204AA, TO-3

Dc Current Gain Hfe Min Ic Vce

750 @ 6A 3V

Çalışma Sıcaklığı

200°C TJ

Vcesatmax

3 V

Montaj Tipi

Chassis Mount

RoHS Durumu

ROHS3 Compliant

Frequency Transition

4MHz

Terminal Formu

PIN/PEG

Power Max

150W

Terminal Kaplaması

Tin/Lead (Sn/Pb)

Transistor Application

SWITCHING

Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Ambalaj

Tube

Jesd30 Code

O-MBFM-P2

Voltage Collector Emitter Breakdown Max

100V

Parça Durumu

Obsolete

Yüzey Montaj

NO

Temel Parça No

2N60

Terminal Pozisyonu

BOTTOM

Nem Hassasiyeti (MSL)

1 (Unlimited)

Case Connection

COLLECTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Power Dissipationmax Abs

150W

Pin Sayısı

2