LEYG25LDB-100-R56P3

Teknik Özellikler

Kılıf / Paket

DPAK-3

Transistor Type

1 N-Channel

Typical Turnon Delay Time

7.5 ns

Technology

Si

Seri

FQD19N10

Tip

MOSFET

Qg Gate Charge

25 nC

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Turnoff Delay Time

20 ns

Ürün Tipi

MOSFET

Forward Transconductance Min

11 S

Id Continuous Drain Current

15.6 A

Pd Power Dissipation

2.5 W

Rise Time

150 ns

Genişlik

6.22 mm

Birim Ağırlık

0.011640 oz

Configuration

Single

Fabrika Paket Adedi

2500

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2 V

Channel Mode

Enhancement

Montaj Stili

SMD/SMT

Number Of Channels

1 Channel

RoHS

Details

Vgs Gatesource Voltage

- 25 V, + 25 V

Ambalaj

MouseReel

Rds On Drainsource Resistance

100 mOhms

Minimum Operating Temperature

- 55 C

Uzunluk

6.73 mm

Vds Drainsource Breakdown Voltage

100 V

Yükseklik

2.39 mm

Part Aliases

FQD19N10TM_NL