0M-816999

Teknik Özellikler

Pd Power Dissipation

50 W

RoHS

Details

Rise Time

45 ns

Uzunluk

6.73 mm

Genişlik

6.22 mm

Transistor Polarity

N-Channel

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 30 V, + 30 V

Typical Turnon Delay Time

16 ns

Qg Gate Charge

16.6 nC

Rds On Drainsource Resistance

1 Ohms

Tradename

SuperFET

Seri

FCD4N60

Minimum Operating Temperature

- 55 C

Technology

Si

Maks. Çalışma Sıcaklığı

+ 150 C

Id Continuous Drain Current

3.9 A

Vgs Th Gatesource Threshold Voltage

3 V

Typical Turnoff Delay Time

36 ns

Montaj Stili

SMD/SMT

Ürün Tipi

MOSFET

Birim Ağırlık

0.011640 oz

Kılıf / Paket

DPAK-3

Vds Drainsource Breakdown Voltage

600 V

Configuration

Single

Fabrika Paket Adedi

2500

Channel Mode

Enhancement

Forward Transconductance Min

3.2 S

Ambalaj

MouseReel

Yükseklik

2.39 mm

Transistor Type

1 N-Channel