SMA6010

Teknik Özellikler

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Active

Current Collector Cutoff Max

100μA ICBO

Collectoremitter Breakdown Voltage

60V

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 0.067

Montaj Tipi

Through Hole

Fall Timemax Tf

1500ns

Number Of Elements

6

HTS Kodu

8541.29.00.75

Terminal Pozisyonu

SINGLE

REACH Uyumluluk Kodu

unknown

Çalışma Sıcaklığı

150°C TJ

Transistor Element Material

SILICON

Dc Current Gain Hfe Min Ic Vce

2000 @ 3A 4V

Terminal Sayısı

12

Jesd30 Code

R-PSIP-T12

Montaj

Through Hole

Transition Frequency

75MHz

Kurşunsuz Kodu

yes

Collector Emitter Voltage Vceo

1.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Transistor Application

SWITCHING

Kılıf / Paket

12-SIP

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

1.5V @ 6mA, 3A

Power Max

4W

Transistor Type

3 NPN, 3 PNP Darlington (3-Phase Bridge)

Fabrika Tedarik Süresi

12 Weeks

Polaritychannel Type

NPN AND PNP

ECCN Kodu

EAR99

Max Collector Current

4A

RoHS Durumu

RoHS Compliant

Configuration

COMPLEX

Kurşunsuz

Lead Free

Max Power Dissipation

4W

Frequency Transition

75MHz

Yayın Yılı

2001

Qualification Status

Not Qualified

Pin Sayısı

12