SMA5112

Teknik Özellikler

Fet Type

6 N-Channel (3-Phase Bridge)

Drain To Source Voltage Vdss

250V

Kurşunsuz Kodu

yes

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Ambalaj

Tube

Fet Feature

Standard

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Kılıf / Paket

12-SIP

Ds Breakdown Voltagemin

250V

Power Max

4W

Drain Currentmax Abs Id

7A

Fabrika Tedarik Süresi

12 Weeks

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Configuration

COMPLEX

RoHS Durumu

RoHS Compliant

Max Power Dissipation

35W

Yayın Yılı

2001

Qualification Status

Not Qualified

Pin Sayısı

12

Drainsource On Resistancemax

0.5Ohm

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

15A

Parça Durumu

Active

Montaj Tipi

Through Hole

Rds On Max Id Vgs

500m Ω @ 3.5A, 10V

Number Of Elements

6

HTS Kodu

8541.29.00.95

Input Capacitance Ciss Max Vds

450pF @ 10V

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

55 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Çalışma Sıcaklığı

150°C TJ

Vgsth Max Id

4V @ 1mA

Transistor Element Material

SILICON

Terminal Sayısı

12

Jesd30 Code

R-PSIP-T12

Continuous Drain Current Id

7A

Montaj

Through Hole