SLA5086

Teknik Özellikler

Vgsth Max Id

2V @ 250μA

Qualification Status

Not Qualified

Power Max

5W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Input Capacitance Ciss Max Vds

790pF @ 10V

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T12

Kurşunsuz Kodu

yes

RoHS Durumu

RoHS Compliant

Montaj Tipi

Through Hole

Fet Feature

Logic Level Gate

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Terminal Pozisyonu

SINGLE

Rds On Max Id Vgs

220m Ω @ 3A, 10V

Çalışma Sıcaklığı

150°C TJ

Configuration

COMMON SOURCE, 5 ELEMENTS WITH BUILT-IN DIODE

Parça Durumu

Not For New Designs

Drain Currentmax Abs Id

5A

HTS Kodu

8541.29.00.95

Continuous Drain Current Id

5A

Drain To Source Voltage Vdss

60V

Kılıf / Paket

12-SIP

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

12 Weeks

Case Connection

ISOLATED

Fet Type

5 P-Channel, Common Source

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.22Ohm

Yayın Yılı

2001

Ds Breakdown Voltagemin

60V

Max Power Dissipation

5W

Number Of Elements

5

Montaj

Through Hole

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

10A

Terminal Sayısı

12

Pin Sayısı

12