2SD2082

Teknik Özellikler

Polaritychannel Type

NPN

Current Collector Cutoff Max

10μA ICBO

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 0.05

Fabrika Tedarik Süresi

36 Weeks

Collectoremitter Breakdown Voltage

120V

RoHS Durumu

RoHS Compliant

Case Connection

ISOLATED

Collector Emitter Voltage Vceo

1.5V

Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

150°C TJ

Transistor Element Material

SILICON

Transition Frequency

20MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

2000 @ 8A 4V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Power Dissipation

75W

Yayın Yılı

2001

Montaj Tipi

Through Hole

Number Of Elements

1

Transistor Application

SWITCHING

Ambalaj

Bulk

Kurşunsuz

Lead Free

ECCN Kodu

EAR99

Pin Sayısı

3

Transistor Type

NPN - Darlington

Terminal Sayısı

3

Frequency Transition

20MHz

Kılıf / Paket

TO-3P-3 Full Pack

Max Collector Current

16A

Jesd30 Code

R-PSFM-T3

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

1.5V @ 16mA, 8A

Power Max

75W

Montaj

Through Hole

Parça Durumu

Active