2SD2015

Teknik Özellikler

Yayın Yılı

2001

Montaj Tipi

Through Hole

Number Of Elements

1

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Max Power Dissipation

25W

Qualification Status

Not Qualified

Dc Current Gain Hfe Min Ic Vce

2000 @ 2A 2V

Transition Frequency

40MHz

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

SINGLE

Çalışma Sıcaklığı

150°C TJ

Transistor Element Material

SILICON

Collectoremitter Breakdown Voltage

120V

Fabrika Tedarik Süresi

12 Weeks

Collector Emitter Voltage Vceo

1.5V

RoHS Durumu

RoHS Compliant

Case Connection

ISOLATED

Configuration

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Polaritychannel Type

NPN

Current Collector Cutoff Max

10μA ICBO

Additional Feature

BUILT IN BIAS RESISTOR RATIO IS 0.167

Parça Durumu

Active

Power Max

25W

Montaj

Through Hole

Jesd30 Code

R-PSFM-T3

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vce Saturation Max Ib Ic

1.5V @ 2mA, 2A

Kılıf / Paket

TO-220-3 Full Pack

Max Collector Current

4A

ECCN Kodu

EAR99

Pin Sayısı

3

Transistor Type

NPN - Darlington

Terminal Sayısı

3

Frequency Transition

40MHz

Kurşunsuz

Lead Free

Transistor Application

SWITCHING

Ambalaj

Bulk