RF316-01SP1-02RP1-3540

Teknik Özellikler

Gate Charge Qg Max Vgs

120 nC @ 10 V

RoHS

Compliant

Power Dissipation Max

160W (Tc)

Technology

MOSFET (Metal Oxide)

Vgsth Max Id

4V @ 250µA

Montaj Tipi

Surface Mount

Direnç

50 Ω

Kılıf / Paket

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Çalışma Sıcaklığı

-55°C ~ 175°C (TJ)

Drive Voltage Max Rds On Min Rds On

10V

Paket

Bulk

Rds On Max Id Vgs

18mOhm @ 35A, 10V

Seri

HEXFET®

Ürün Durumu

Active

Vgs Max

±20V

Drain To Source Voltage Vdss

100 V

Tedarikçi Cihaz Paketi

PG-TO263-3

Current Continuous Drain Id25

59A (Tc)

Input Capacitance Ciss Max Vds

2900 pF @ 25 V

Fet Type

N-Channel

Uzunluk

3.54 m