MH113-MH1RP-01BR1-0165

Teknik Özellikler

Kılıf / Paket

SOT-23-3

Pd Power Dissipation

225 mW

RoHS

Details

Transistor Polarity

N-Channel

Tip

JFET

Maks. Çalışma Sıcaklığı

+ 150 C

Forward Transconductance Min

0.0035 S to 0.007 S

Fabrika Paket Adedi

3000

Ambalaj

Reel

Birim Ağırlık

0.000282 oz

Maximum Drain Gate Voltage

25 V

Seri

MMBF5485

Operating Temperature Range

- 55 C to + 150 C

Montaj Stili

SMD/SMT

Gatesource Cutoff Voltage

- 4 V

Minimum Operating Temperature

- 55 C

Ürün Tipi

JFETs

Id Continuous Drain Current

10 mA

Configuration

Single

Vgs Gatesource Breakdown Voltage

- 25 V

Technology

Si