Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Avalanche Energy Rating Eas
- 102 mJ
- Terminal Pozisyonu
- SINGLE
- Number Of Elements
- 1
- Yüzey Montaj
- YES
- Operating Mode
- ENHANCEMENT MODE
- Jesd30 Code
- R-PSSO-G2
- Number Of Terminals
- 2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Part Life Cycle Code
- Transferred
- Part Package Code
- TO-252
- Polaritychannel Type
- P-CHANNEL
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Jedec95 Code
- TO-252
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 4 Ω
- Package Description
- SMALL OUTLINE, R-PSSO-G2
- Package Shape
- RECTANGULAR
- Transistor Element Material
- SILICON
- Power Dissipationmax Abs
- 19 W
- Terminal Formu
- GULL WING
- Terminal Kaplaması
- TIN LEAD
- Drain Currentmax Id
- 1.53 A
- Qualification Status
- Not Qualified
- Transistor Application
- SWITCHING
- Pulsed Drain Currentmax Idm
- 6.1 A
- JESD-609 Kodu
- e0
- Pin Sayısı
- 3
- Operating Temperaturemax
- 150 °C
- Case Connection
- DRAIN
- Package Body Material
- PLASTIC/EPOXY
- REACH Uyumluluk Kodu
- unknown
- Package Style
- SMALL OUTLINE
- Rohs Code
- No
- Ds Breakdown Voltagemin
- 250 V
- Ihs Manufacturer
- SAMSUNG SEMICONDUCTOR INC
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