Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Dc Current Gainmin Hfe
- 200
- Power Dissipation Max
- 350mW
- JESD-609 Kodu
- e0
- Montaj
- Through Hole
- Polaritychannel Type
- NPN
- Configuration
- SINGLE
- Package Body Material
- PLASTIC/EPOXY
- Terminal Sayısı
- 3
- Fabrika Tedarik Süresi
- 8 Weeks
- Collectoremitter Voltagemax
- 50 V
- Element Configuration
- Single
- Gain Bandwidth Product
- 30MHz
- Emitter Base Voltage Vebo
- 4.5V
- REACH Uyumluluk Kodu
- unknown
- Pin Sayısı
- 3
- RoHS Durumu
- RoHS Compliant
- Üretici Parça No
- 2N5210
- Parça Durumu
- Active
- Transition Frequencynom Ft
- 30 MHz
- Qualification Status
- Not Qualified
- Terminal Formu
- THROUGH-HOLE
- Reflow Temperaturemax S
- NOT SPECIFIED
- Jedec95 Code
- TO-92
- Yayın Yılı
- 2012
- Operating Temperature Max
- 150°C
- Rohs Code
- No
- Risk Rank
- 1.53
- Continuous Collector Current
- 100mA
- Part Life Cycle Code
- Active
- Power Dissipationmax Abs
- 0.62 W
- Transistor Element Material
- SILICON
- Package Style
- CYLINDRICAL
- Jesd30 Code
- O-PBCY-T3
- Number Of Elements
- 1
- Package Shape
- ROUND
- Kurşunsuz Kodu
- No
- Collector Currentmax Ic
- 0.05 A
- Ambalaj
- Bulk
- Ihs Manufacturer
- CENTRAL SEMICONDUCTOR CORP
- Collector Base Voltage Vcbo
- 50V
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