VT6M1T2CR

Teknik Özellikler

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz

Lead Free

Tepe Reflow Süresi (maks. sn)

10

Yayın Yılı

1997

Fabrika Tedarik Süresi

16 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

7.1pF @ 10V

Transistor Application

SWITCHING

Rds On Max Id Vgs

3.5 Ω @ 100mA, 4.5V

Drainsource On Resistancemax

4.2Ohm

Drain To Source Voltage Vdss

20V

Drain Currentmax Abs Id

0.1A

Pin Sayısı

6

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Element Material

SILICON

Tepe Reflow Sıcaklığı (°C)

260

Ds Breakdown Voltagemin

20V

Terminal Pozisyonu

DUAL

Vgsth Max Id

1V @ 100μA

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Jesd30 Code

R-PDSO-F6

Montaj

Surface Mount

Fet Feature

Logic Level Gate, 1.2V Drive

Çalışma Sıcaklığı

150°C TJ

Number Of Elements

2

Terminal Kaplaması

TIN SILVER COPPER

Ambalaj

Cut Tape (CT)

Terminal Sayısı

6

Kılıf / Paket

6-SMD, Flat Leads

Max Power Dissipation

120mW

Power Max

120mW

Montaj Tipi

Surface Mount

Fet Type

N and P-Channel

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

JESD-609 Kodu

e1

Continuous Drain Current Id

100mA