VT6K1T2CR

Teknik Özellikler

Drain To Source Breakdown Voltage

20V

Rds On Max Id Vgs

3.5 Ω @ 100mA, 4.5V

Transistor Application

SWITCHING

Number Of Channels

2

Drain To Source Voltage Vdss

20V

Drain Currentmax Abs Id

0.1A

Fabrika Tedarik Süresi

16 Weeks

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

7.1pF @ 10V

Tepe Reflow Süresi (maks. sn)

10

Yayın Yılı

2011

Turn Off Delay Time

20 ns

Operating Mode

ENHANCEMENT MODE

Turn On Delay Time

5 ns

RoHS Durumu

ROHS3 Compliant

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Kurşunsuz

Lead Free

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate To Source Voltage Vgs

8V

Fall Time Typ

38 ns

Pin Sayısı

6

Pin Sayısı

6

Ambalaj

Cut Tape (CT)

Terminal Sayısı

6

Çalışma Sıcaklığı

150°C TJ

Number Of Elements

2

Terminal Kaplaması

TIN SILVER COPPER

Montaj

Surface Mount

Fet Feature

Logic Level Gate, 1.2V Drive

Vgsth Max Id

1V @ 100μA

Continuous Drain Current Id

100mA

Rise Time

4ns

JESD-609 Kodu

e1

Montaj Tipi

Surface Mount

Fet Type

2 N-Channel (Dual)

Max Power Dissipation

120mW

Kılıf / Paket

6-SMD, Flat Leads