VT6J1T2CR

Teknik Özellikler

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

20V

Tepe Reflow Sıcaklığı (°C)

260

Transistor Element Material

SILICON

Pin Sayısı

6

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

15pF @ 10V

Fabrika Tedarik Süresi

16 Weeks

Drain Currentmax Abs Id

0.1A

Rds On Max Id Vgs

3.8 Ω @ 100mA, 4.5V

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

20V

Kurşunsuz

Lead Free

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Yayın Yılı

2012

Tepe Reflow Süresi (maks. sn)

10

JESD-609 Kodu

e1

Continuous Drain Current Id

100mA

Max Power Dissipation

120mW

Kılıf / Paket

6-SMD, Flat Leads

Power Max

120mW

Fet Type

2 P-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

Montaj Tipi

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Terminal Kaplaması

TIN SILVER COPPER

Number Of Elements

2

Terminal Sayısı

6

Ambalaj

Cut Tape (CT)

Vgsth Max Id

1V @ 100μA

Fet Feature

Logic Level Gate, 1.2V Drive

Jesd30 Code

R-PDSO-F6

Montaj

Surface Mount