UMD9NFHATR

Teknik Özellikler

Power Max

150mW

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Dc Current Gain Hfe Min Ic Vce

68 @ 5mA 5V

Transistor Application

SWITCHING

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Transistor Type

1 NPN, 1 PNP - Pre-Biased (Dual)

Currentcollector Ic Max

100mA

RoHS Durumu

ROHS3 Compliant

Yüzey Montaj

YES

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Vce Saturation Max Ib Ic

300mV @ 250μA, 5mA

Resistor Emitter Base R2

47k Ω

Seri

Automotive, AEC-Q101

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 4.7

Transition Frequency

250MHz

Tepe Reflow Süresi (maks. sn)

10

Current Collector Cutoff Max

500nA

Fabrika Tedarik Süresi

13 Weeks

Jesd30 Code

R-PDSO-G6

Parça Durumu

Active

Kılıf / Paket

6-VSSOP, SC-88, SOT-363

Frequency Transition

250MHz

JESD-609 Kodu

e2

Voltage Collector Emitter Breakdown Max

50V

Number Of Elements

2

Polaritychannel Type

NPN AND PNP

Resistor Base R1

10k Ω

Terminal Formu

GULL WING