UMB4NFHATN

Teknik Özellikler

Voltage Collector Emitter Breakdown Max

50V

Dc Current Gain Hfe Min Ic Vce

100 @ 1mA 5V

Vce Saturation Max Ib Ic

300mV @ 1mA, 10mA

Power Max

150mW

Additional Feature

BUILT IN BIAS RESISTOR

Currentcollector Ic Max

100mA

Transistor Application

SWITCHING

Frequency Transition

250MHz

Terminal Formu

GULL WING

Çalışma Sıcaklığı

150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Polaritychannel Type

PNP

RoHS Durumu

ROHS3 Compliant

Ambalaj

Cut Tape (CT)

Current Collector Cutoff Max

500nA ICBO

Terminal Sayısı

6

Reach Svhc

Unknown

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

2

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Transistor Type

2 PNP Pre-Biased (Dual)

Collectoremitter Breakdown Voltage

-50V

Yayın Yılı

2016

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Transistor Element Material

SILICON

Yüzey Montaj

YES

Pin Sayısı

6

Seri

Automotive, AEC-Q101

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Montaj Tipi

Surface Mount

Parça Durumu

Active

Transition Frequency

250MHz