UMB11NFHATN

Teknik Özellikler

Collectoremitter Breakdown Voltage

-50V

REACH Uyumluluk Kodu

not_compliant

Kılıf / Paket

6-VSSOP, SC-88, SOT-363

Yayın Yılı

2016

Max Power Dissipation

150mW

Transistor Element Material

SILICON

Yüzey Montaj

YES

ECCN Kodu

EAR99

Fabrika Tedarik Süresi

13 Weeks

Transistor Type

2 PNP - Pre-Biased (Dual)

Resistor Emitter Base R2

10k Ω

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Parça Durumu

Active

Montaj Tipi

Surface Mount

Transition Frequency

250MHz

Pin Sayısı

6

Seri

Automotive, AEC-Q101

Vce Saturation Max Ib Ic

300mV @ 500μA, 10mA

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Maks. Çalışma Sıcaklığı

150°C

Resistor Base R1

10k Ω

Currentcollector Ic Max

100mA

Voltage Collector Emitter Breakdown Max

50V

Dc Current Gain Hfe Min Ic Vce

30 @ 5mA 5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Current Collector Cutoff Max

500nA

Terminal Sayısı

6

Reach Svhc

Unknown

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Terminal Formu

GULL WING

Frequency Transition

250MHz

Polarity

PNP