TT8K11TCR

Teknik Özellikler

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F8

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2.5V @ 1A

Drain Currentmax Abs Id

3A

Yayın Yılı

2011

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate, 4V Drive

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

140pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.109Ohm

Transistor Element Material

SILICON

Continuous Drain Current Id

3A

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

8

Fabrika Tedarik Süresi

10 Weeks

Gate Charge Qg Max Vgs

2.5nC @ 5V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Not For New Designs

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

71m Ω @ 3A, 10V

Power Max

1W

Ambalaj

Cut Tape (CT)

Max Power Dissipation

1W

Kılıf / Paket

8-SMD, Flat Lead