TT8J1TR

Teknik Özellikler

Fet Type

2 P-Channel (Dual)

Temel Parça No

*J1

Terminal Sayısı

8

Pin Sayısı

8

Gate To Source Voltage Vgs

10V

Gate Charge Qg Max Vgs

13nC @ 4.5V

Radyasyon Dayanımı

No

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Obsolete

Rds On Max Id Vgs

61m Ω @ 2.5A, 4.5V

Power Max

1.25W

Max Power Dissipation

1W

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-SMD, Flat Lead

Turn Off Delay Time

130 ns

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Drain To Source Voltage Vdss

12V

Transistor Application

SWITCHING

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Yayın Yılı

2009

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Standard

Vgsth Max Id

1V @ 1mA

Turn On Delay Time

9 ns

Montaj

Surface Mount

Input Capacitance Ciss Max Vds

1350pF @ 6V

Pulsed Drain Currentmax Idm

10A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Drainsource On Resistancemax

0.061Ohm

Rise Time

35ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Transistor Element Material

SILICON

Continuous Drain Current Id

2.5A

Fall Time Typ

85 ns

Ds Breakdown Voltagemin

12V