TT8J13TCR

Teknik Özellikler

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

12V

Jesd30 Code

R-PDSO-F8

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Fet Feature

Logic Level Gate, 1.5V Drive

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2011

Vgsth Max Id

1V @ 1mA

Drainsource On Resistancemax

0.062Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

8

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

5A

Input Capacitance Ciss Max Vds

2000pF @ 6V

Ds Breakdown Voltagemin

12V

Number Of Elements

2

Continuous Drain Current Id

2.5A

Transistor Element Material

SILICON

Gate Charge Qg Max Vgs

16nC @ 4.5V

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

8

Fet Type

2 P-Channel (Dual)

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Power Max

1W

Kurşunsuz

Lead Free

Rds On Max Id Vgs

62m Ω @ 2.5A, 4.5V

Parça Durumu

Not For New Designs

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SMD, Flat Lead

Ambalaj

Cut Tape (CT)

Max Power Dissipation

1W