TT8J11TCR

Teknik Özellikler

Jesd30 Code

R-PDSO-F8

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

12V

Montaj

Surface Mount

Yayın Yılı

2012

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate, 1.5V Drive

Vgsth Max Id

1V @ 1mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

12A

Input Capacitance Ciss Max Vds

2600pF @ 6V

Drainsource On Resistancemax

0.043Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

8

Ds Breakdown Voltagemin

12V

Number Of Elements

2

Transistor Element Material

SILICON

Continuous Drain Current Id

3.5A

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

8

Fet Type

2 P-Channel (Dual)

Gate Charge Qg Max Vgs

22nC @ 4.5V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Parça Durumu

Not For New Designs

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Max

650mW

Rds On Max Id Vgs

43m Ω @ 3.5A, 4.5V

Max Power Dissipation

650mW

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SMD, Flat Lead