SP8M8TB

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.047Ohm

Rise Time

25ns

Pin Sayısı

8

Input Capacitance Ciss Max Vds

520pF @ 10V

Pulsed Drain Currentmax Idm

24A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

30V

Transistor Element Material

SILICON

Continuous Drain Current Id

4.5A

Number Of Elements

2

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

10

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Drain To Source Voltage Vdss

30V

Current Continuous Drain Id25

6A 4.5A

Qualification Status

Not Qualified

RoHS Durumu

ROHS3 Compliant

Kurşunsuz Kodu

yes

Montaj

Surface Mount

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2006

Drain Currentmax Abs Id

6A

Akım Değeri

6A

Kurşunsuz

Lead Free

Rds On Max Id Vgs

30m Ω @ 6A, 10V

Parça Durumu

Obsolete

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

2W

JESD-609 Kodu

e2

Gate Charge Qg Max Vgs

7.2nC @ 5V

Terminal Kaplaması

TIN COPPER

Pin Sayısı

8