SP8M8FU6TB

Teknik Özellikler

Radyasyon Dayanımı

No

Fet Type

N and P-Channel

Temel Parça No

*M8

Pin Sayısı

8

Gate To Source Voltage Vgs

20V

Gate Charge Qg Max Vgs

10.1nC @ 5V

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

2W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn Off Delay Time

60 ns

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Parça Durumu

Obsolete

Rds On Max Id Vgs

30m Ω @ 6A, 10V

Kurşunsuz

Lead Free

Drain Currentmax Abs Id

6A

Yayın Yılı

2007

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate

Vgsth Max Id

2.5V @ 1mA

Montaj

Surface Mount

Power Dissipation

2W

Direnç

47MOhm

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

6A 4.5A

Drain To Source Breakdown Voltage

30V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Continuous Drain Current Id

4.5A

Fall Time Typ

25 ns

Input Capacitance Ciss Max Vds

520pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Rise Time

25ns

Nem Hassasiyeti (MSL)

1 (Unlimited)