SP8M7TB

Teknik Özellikler

Continuous Drain Current Id

7A

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Input Capacitance Ciss Max Vds

230pF @ 10V

Pulsed Drain Currentmax Idm

20A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

50ns

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2004

Drain Currentmax Abs Id

5A

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

5A 7A

Qualification Status

Not Qualified

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Terminal Pozisyonu

DUAL

JESD-609 Kodu

e2

Max Power Dissipation

2W

Ambalaj

Tape & Reel (TR)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Parça Durumu

Obsolete

Rds On Max Id Vgs

51m Ω @ 5A, 10V

Kurşunsuz

Lead Free

Akım Değeri

5A

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Formu

GULL WING

Fet Type

N and P-Channel

Terminal Sayısı

8