SP8M6FU6TB

Teknik Özellikler

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

15ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

230pF @ 10V

Fall Time Typ

10 ns

Continuous Drain Current Id

3.5A

Operating Mode

ENHANCEMENT MODE

Drain To Source Breakdown Voltage

30V

Current Continuous Drain Id25

5A 3.5A

RoHS Durumu

ROHS3 Compliant

Power Dissipation

2W

Montaj

Surface Mount

Vgsth Max Id

2.5V @ 1mA

Drain Currentmax Abs Id

5A

Yayın Yılı

2004

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate

Rds On Max Id Vgs

51m Ω @ 5A, 10V

REACH Uyumluluk Kodu

unknown

Parça Durumu

Obsolete

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Turn Off Delay Time

35 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

2W

Gate Charge Qg Max Vgs

3.9nC @ 5V

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

Temel Parça No

*M6

Fet Type

N and P-Channel