SP8M51TB1

Teknik Özellikler

Power Dissipation

2W

Montaj

Surface Mount

Fet Feature

Standard

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2011

Drain Currentmax Abs Id

3A

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

100V

Current Continuous Drain Id25

3A 2.5A

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

2.5A

Transistor Element Material

SILICON

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.19Ohm

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

12A

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pin Sayısı

8

Terminal Sayısı

8

Temel Parça No

*M51

Fabrika Tedarik Süresi

26 Weeks

Terminal Formu

GULL WING

Fet Type

N and P-Channel

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W

Ambalaj

Tape & Reel (TR)

Kurşunsuz

Lead Free

Parça Durumu

Last Time Buy

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount